BSP61,115 datasheet

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• Маркировка
  BSP61,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BSP61,115 Collector- Base Voltage Vcbo: 80 V Collector- Emitter Voltage Vceo Max: 60 V Configuration: Single Continuous Collector Current: - 1 A Current - Collector (ic) (max): 1A Current - Collector Cutoff (max): 50nA Dc Collector/base Gain Hfe Min: 1000 Dc Current Gain (hfe) (min) @ Ic, Vce: 2000 @ 500mA, 10V Emitter- Base Voltage Vebo: 5 V Frequency - Transition: 200MHz ID_COMPONENTS: 3592524 Maximum Dc Collector Current: 1 A Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Power - Max: 1.25W Power Dissipation: 1.25 W Series: - Transistor Polarity: PNP Transistor Type: PNP - Darlington Vce Saturation (max) @ Ib, Ic: 1.3V @ 500?µA, 500mA Voltage - Collector Emitter Breakdown (max): 60V Product Category: Transistors Darlington RoHS: yes Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 80 V Maximum DC Collector Current: 1 A DC Collector/Base Gain hfe Min: 1000 Factory Pack Quantity: 1000 Part # Aliases: BSP61 T/R Other Names: 933986360115::BSP61 T/R::BSP61 T/R
• Количество страниц
  7 шт.
• Формат
  PDF

  (Для просмотра требуется Adobe Acrobat Reader)
• Размер файла
  65,21 KB

BSP61,115 datasheet скачать

BSP61,115 datasheet